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  Datasheet File OCR Text:
 Excelics
* * * * * 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 25% TYPICAL) +33.0 TYPICAL P1dB OUTPUT POWER 7.5dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE
EIA1415A-2P
Not recommended for new designs. Contact factory. Effective 03/2003 14.0-15.35GHz, 2W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1415-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Power Added Efficiency at 1dB compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=12mA -13 1100
rd
MIN 32.0 6.5
TYP 33.0 7.5 25 900 40 1440 1500 -1.0 -15 8
MAX
UNIT dBm dB
P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth
% mA dBm 1700 mA mS -2.5 V V
o
Drain Breakdown Voltage Igd=4.8mA Thermal Resistance (Au-Sn Eutectic Attach)
C/W
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 180mA 32dBm 175oC -65/175oC 17W 8V -3V Idss 30mA @ 3dB Compression 150oC -65/150oC 14.2W CONTINUOUS2
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com


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